姓名 |
王沛志 |
性别 |
男 |
|
出生年月 |
1992.1
|
行政职务 |
|
学历 |
博士研究生 |
学位 |
博士 |
专业技术职务及任导师情况 |
研究员,博士研究生导师 |
所在一级学科名称 |
机械工程 |
所在二级学科名称 |
机械设计及理论 |
|
学术身份
suncitygroup太阳新城齐鲁青年学者
学术兼职
国际纳米制造协会(ISNM)会员、国际工程技术促进会(AET)会员、国际期刊Nanomanufacturing and Metrology青年编委,Int J Mech Sci、J Clean Prod、Ceram Int、Mat Sci Semicon Proc等期刊审稿人。
国内外学习和工作经历
2010.09-2014.06,suncitygroup太阳新城,机械设计制造及其自动化,工学学士
2014.09-2020.06,suncitygroup太阳新城,机械设计及理论,工学博士
2020.09-2023.12,爱尔兰都柏林大学,博士后研究员
2024.01-至今,suncitygroup太阳集团,研究员、博士研究生导师
研究领域
(1)半导体材料的磨粒加工技术
(2)半导体材料的原子级制造
参与科研项目情况
[1] Enterprise Ireland,EyeVU - Miniaturised Endoscope Camera Development,2022-2023,参与
[2] 爱尔兰国家科学基金(SFI),Ultra-precision machining in medical device manufacturing(15/RP/B3208),2020-2021,参与
[3] 国家自然科学基金,树脂金刚石线锯锯切硅晶体最小切片厚度研究(No.51775317),2017-2020,参与
[4] 美国国家科学基金(NSF),Diamond wire slicing of crystalline silicon materials with application to manufacturing of high quality solar cell substrates(CMMI No.1538293),2018-2019,参与
近期代表性论文
[1] Wang P, Fang FZ. (2023). Defect-mediated atomic layer etching processes on Cl-Si (100): An atomistic insight. Journal of Physical Chemistry C, 43, 21106-21113.
[2] Wang P, Fang FZ. (2023). Ab initio simulations of ultrashort laser pulse interaction with Cl-Si (100): implications for atomic layer etching. Physical Chemistry Chemical Physics, 25(31), 20871-20879.
[3] Wang P, Castelli M, Fang FZ. (2023). Mechanism of photo-assisted atomic layer etching of chlorinated Si (111) surfaces: Insights from DFT/TDDFT calculations. Materials Science in Semiconductor Processing, 153, 107169
[4] Wang P, Fang FZ. (2022). Real-time time-dependent DFT study of laser-enhanced atomic layer etching of silicon for damage-free nanostructure fabrication. Journal of Applied Physics, 132, 144303
[5] Wang P, Wang J, Fang FZ. (2021). Study on mechanisms of photon-induced material removal on silicon at atomic and close-to-atomic scale. Nanomanufacturing and Metrology, 4, 216–225.
[6] Wang P, Wang B, Melkote SN. (2020). Modeling and simulation of phase transformation and crack formation during scribing of mono-crystalline silicon. International Journal of Mechanical Sciences, 175, 105527.
[7] Wang P, Ge P, Ge M, et al. (2019). Material removal mechanism and crack propagation in single scratch and double scratch tests of single-crystal silicon carbide by abrasives on wire saw. Ceramics International, 45(1), 384-393.
[8] Wang P, Ge P, Bi W, et al. (2019). Interaction of lateral cracks in double scratching of single-crystal silicon carbide. Theoretical and Applied Fracture Mechanics, 104, 102378.
[9] Wang P, Ge P, Bi W, et al. (2018). Stress analysis in scratching of anisotropic single-crystal silicon carbide. International Journal of Mechanical Sciences, 141, 1-8.
联系方式
地址:山东省济南市经十路17923号suncitygroup太阳新城千佛山校区suncitygroup太阳集团
邮编:250061
邮箱:peizhi.wang@sdu.edu.cn